TF12A80
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
102
101
100
VGM (10V)
101
100
10-1
PGM (5W)
TJ = 125oC
PG(AV) (1W)
25 ℃
TJ = 25oC
VGD (0.2V)
101
102
103
0.5
1.0
1.5
2.0
2.5
3.0
3.5
On-State Voltage [V]
Gate Current [mA]
Fig 4. On State Current vs.
Fig 3. On State Current vs.
Allowable Case Temperature
Maximum Power Dissipation
16
130
120
110
100
90
θ = 180o
θ = 150o
14
12
10
8
θ
π
π
2
θ = 120o
θ = 90o
θ = 60o
θ
360°
θ : Conduction Angle
θ = 30o
θ = 60o
θ = 90o
θ
θ = 30o
π
π
2
6
θ
θ = 120o
θ = 150o
θ = 180o
4
360°
80
θ : Conduction Angle
2
0
70
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
RMS On-State Current [A]
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
10
200
150
100
50
V_
60Hz
GT3
1
V+
GT1
V_
GT1
50Hz
0
0.1
-50
100
101
102
0
50
100
150
Junction Temperature [ oC]
Time (cycles)
3/6
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
