AOU404
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU404 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU404 is Pb-free (meets ROHS & Sony
259 specifications). AOU404L is a Green Product
ordering option. AOU404 and AOU404L are
electrically identical.
VDS (V) = 75V
ID = 10 A (VGS = 20V)
RDS(ON) < 130 mΩ (VGS = 20V) @ 5A
RDS(ON) < 140 mΩ (VGS = 10V)
RDS(ON) < 165 mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±25
V
A
TC=25°C
10
TC=100°C
ID
10
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
20
10
15
A
mJ
TC=25°C
Power Dissipation B
TC=100°C
20
PD
W
10
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Units
Maximum Junction-to-Ambient A
Steady-State
Steady-State
RθJA
115
140
°C/W
Maximum Junction-to-Case B
RθJC
4.5
7.5
°C/W
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
