AOD609
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
V
DS
=-20V
I
D
= -12A
Capacitance (pF)
1400
1200
1000
800
600
400
200
0
0
9
12
15
Q
g
(nC)
Figure 18: Gate-Charge Characteristics
3
6
18
0
20
30
-V
DS
(Volts)
Figure 19: Capacitance Characteristics
10
40
C
rss
C
oss
8
-V
GS
(Volts)
C
iss
6
4
2
0
100
10µs
10
-I
D
(Amps)
100µs
1
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
0.1
1
-V
DS
(Volts)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
1ms
10ms
0.1s
1s
10s
1000
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
10
0.1
DC
10
0.01
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
