AOD403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
Standard Product
AOD403 is Pb-free (meets ROHS & Sony 259
specifications). AOD403L is a Green Product
ordering option. AOD403 and AOD403L are
electrically identical.
TO-252
D-PAK
D
Features
V
DS
(V) = -30V
I
D
= -85A (V
GS
= -20V)
R
DS(ON)
< 6mΩ (V
GS
= -20V)
R
DS(ON)
< 7.6mΩ (V
GS
= -10V)
Top View
Drain Connected
to Tab
G
G
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
-30
±25
-85
-65
-200
-30
120
100
50
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
B
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
13
39
0.56
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
