AOD403/AOI403
30V P-Channel MOSFET
General Description
The AOD403/AOI403 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and low gate
resistance. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current load applications.
Product Summary
V
DS
I
D
(at V
GS
= -20V)
R
DS(ON)
(at V
GS
= -20V)
R
DS(ON)
(at V
GS
= -10V)
-30V
-70A
< 6.2mΩ
< 8mΩ
100% UIS Tested
100% R
g
Tested
TO252
DPAK
Top View
D
D
Bottom View
Top View
TO251A
IPAK
Bottom View
D
S
G
S
G
S
D
G
S
D
G
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
-30
±25
-70
-55
-200
-15
-12
-50
125
90
45
2.5
1.6
-55 to 175
Units
V
V
A
V
GS
C
T
C
=25°
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
41
0.9
Max
20
50
1.6
Units
°
C/W
°
C/W
°
C/W
Rev 8: May 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
