AOD2810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=40V
ID=20A
Ciss
8
2000
1500
1000
500
0
6
4
Coss
2
Crss
10
0
0
5
10
15
20
25
30
0
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
50
60
70
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
500
400
300
200
100
0
1000.0
100.0
10.0
1.0
TJ(Max)=175°C
TC=25°C
10µs
10µs
RDS(ON)
100µs
17
5
2
1ms
10ms
DC
10
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
0
VDS (Volts)
Pulse Width (s)
18
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
PD
0.1
Ton
T
Single Pulse
0.0001
0.01
1E-05
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0:Dec. 2012
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
