AOT11S65/AOB11S65/AOTF11S65
650V 11A
α
MOS
TM
Power Transistor
General Description
The AOT11S65 & AOB11S65 & AOTF11S65 have been
TM
fabricated using the advanced
αMOS
high voltage
process that is designed to deliver high levels of
performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
750V
45A
0.399Ω
13.2nC
2.9µJ
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT11S65L & AOB11S65L & AOTF11S65L
Top View
TO-220
TO-220F
TO-263
D
2
PAK
D
D
G
AOT11S65
D
S
G
AOTF11S65
D
G
S
G
AOB11S65
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT11S65/AOB11S65
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
AOTF11S65
650
±30
11*
8*
45
2
60
120
AOTF11S65L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
AOT11S65/AOB11S65
65
0.5
0.63
198
1.6
11
8
11*
8*
A
A
mJ
mJ
31
0.25
W
W/
o
C
V/ns
°
C
°
C
AOTF11S65L
65
--
4
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
G
T
C
=25°
C
Power Dissipation
B
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
39
0.31
100
20
-55 to 150
300
AOTF11S65
65
--
3.25
R
θCS
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev1: Mar 2012
www.aosmd.com
Page 1 of 7
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
