AOT11S60/AOB11S60/AOTF11S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
0
0
4
8
12
16
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
6
5
Eoss(uJ)
4
3
2
10
C
rss
1
0
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
600
1
0
0
100
200
300
400
V
DS
(Volts)
Figure 10: Coss stored Energy
500
600
E
oss
V
GS
(Volts)
25°C
9
125°C
15
12
V
DS
=480V
I
D
=5.5A
6
Capacitance (pF)
1000
C
iss
100
C
oss
100
R
DS(ON)
limited
10µs
100
10µs
10
I
D
(Amps)
10
I
D
(Amps)
R
DS(ON)
limited
100µs
1
DC
1ms
10ms
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S60 (Note F)
100
1000
100µs
1
DC
1ms
10ms
0.1s
1s
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
0.1
1
10
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF11S60(Note F)
100
1000
Rev 5: Sep 2012
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