AOT10N60/AOB10N60/AOTF10N60
600V,10A N-Channel MOSFET
General Description
The AOT10N60 & AOB10N60 & AOTF10N60 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT10N60L & AOTF10N60L & AOB10N60L
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
10A
< 0.75Ω
100% UIS Tested
100% R
g
Tested
Top View
TO-220
TO-220F
D
TO-263
2
D PAK
D
G
G
D
S
G
AOTF10N60
D
S
G
AOB10N60
S
S
AOT10N60
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT10N60/AOB10N60
Symbol
V
DS
Drain-Source Voltage
600
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF10N60
Units
V
V
V
GS
T
C
=25°
C
C
T
C
=100°
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
250
2
10
7.2
±30
10*
7.2*
36
4.4
290
580
5
50
0.4
-55 to 150
300
AOT10N60/AOB10N60
65
0.5
0.5
AOTF10N60
65
--
2.5
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev7: Jul 2011
www.aosmd.com
Page 1 of 6
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
