AOB10B60D
600V, 10A Alpha IGBT
TM
with Diode
General Description
The Alpha IGBT
TM
line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
Product Summary
V
CE
I
C
(T
C
=100°
C)
V
CE(sat)
(T
C
=25°
C)
600V
10A
1.53V
Top View
TO-263
D
2
PAK
C
C
G
E
G
AOB10B60D
E
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Collector-Emitter Voltage
V
CE
Gate-Emitter Voltage
C
Continuous Collector T
C
=25°
T
C
=100°
C
Current
Pulsed Collector Current, Limited by T
Jmax
Turn off SOA, V
CE
≤
600V, Limited by T
Jmax
Continuous Diode
Forward Current
T
C
=25°
C
T
C
=100°
C
V
GE
I
C
I
CM
I
LM
I
F
I
FM
t
SC
AOB10B60D
600
±20
20
10
40
40
20
10
40
10
163
82
-55 to 150
300
AOB10B60D
65
0.92
1.7
Units
V
V
A
A
A
A
A
µs
Diode Pulsed Current, Limited by T
Jmax
Short circuit withstanding time V
GE
= 15V, V
CE
≤
400V, Delay between short circuits
≥
1.0s,
T
C
=150°
C
C
T
C
=25°
Power Dissipation
T
C
=100°
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
P
D
T
J
, T
STG
T
L
Symbol
R
θ
JA
R
θ
JC
R
θ
JC
W
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Rev0: July 2012
www.aosmd.com
Page 1 of 9
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
