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AO9926A 参数 Datasheet PDF下载

AO9926A图片预览
型号: AO9926A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 218 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AO9926A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=7A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=4A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=5A
Diode Forward Voltage
I
S
=1A
Maximum Body-Diode Continuous Current
0.3
30
21.6
29.2
26.4
33.3
22
0.76
1
3
1050
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
163
129
4
15.2
V
GS
=4.5V, V
DS
=10V, I
D
=7A
1
4
6.5
V
GS
=5V, V
DS
=10V, R
L
=1.5Ω,
R
GEN
=3Ω
I
F
=5A, dI/dt=100A/µs
9
56.5
13.2
21
7.1
26
36
33
42
0.5
Min
20
1
5
100
0.8
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge I
F
=5A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.