AO8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
20
3V
4V
20
I
D
(A)
I
D
(A)
10
125°C
25°C
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=2V
15
V
GS
=5V
10
V
GS
=1.5V
5
50
40
R
DS(ON)
(m
Ω
)
V
GS
=1.8V
30
V
GS
=4.5V
20
10
0
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=10V
V
GS
=2.5V
Normalize ON-Resistance
1.6
V
GS
=1.8V
I
D
=2A
1.4
V
GS
=4.5V
I
D
=6.6A
1.2
I
D
=7A
V
GS
=2.5V
I
D
=5.5A
V
GS
=10V
1.0
0.8
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
80
70
60
R
DS(ON)
(m
Ω
)
I
S
(A)
50
40
30
20
10
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=7A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
