AO8814
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
V
DS
=10V
4
V
GS
(Volt
s)
3
2
1
0
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
I
D
=7.5A
Capacitance (pF
)
1600
1200
800
400
0
0
5
C
rss
C
iss
C
oss
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10µs
100µs
1ms
0.1s
10ms
Power (W)
40
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
30
20
1.0
1s
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=83°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.