AO8818
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
3.5V
10V
15
20
I
D
(A)
V
GS
=2.5V
I
D
(A)
V
GS
=2V
10
5
25°C
10
20
V
DS
=5V
125°C
0
0
1
2
3
4
5
V
DS
(Volts)
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
c
Figure 1: On-Regions Characteristi
s
40
1.6
Normalize ON-Resistance
V
GS
=4.5V
1.4
I
D
=5A
V
GS
=2.5V
I
D
=4A
V
GS
=10V
1.0
I
D
=7A
30
R
DS(ON)
(m
Ω
)
V
GS
=2.5V
20
10
V
GS
=4.5V
V
GS
=10V
1.2
0
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
I
D
=7A
50
R
DS(ON)
(m
Ω
)
40
30
20
10
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
1E+01
1E+00
1E-01
I
S
(A)
1E-02
1E-03
125°C
25°C
1E-04
1E-05
0.0
0.2
0.4
25°C
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
