AO8818
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250μA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
I
D
=250μA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7A
T
J
=125°C
V
GS
=4.5V, I
D
=5A
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4V, I
D
=5A
V
GS
=3.1V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
GS
=1.8V, I
D
=3A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=5V, I
D
=7A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
±12
0.6
30
11.5
16
13
13.5
15
17
35
15
21
17
17.5
19.5
22
45
45
0.74
1
2.5
880
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
130
90
1.3
11.6
V
GS
=4.5V, V
DS
=15V, I
D
=7A
1.9
4.6
8.7
V
GS
=5V, V
DS
=15V, R
L
=2.2Ω,
R
GEN
=3Ω
I
F
=7A, dI/dt=100A/μs
I
F
=7A, dI/dt=100A/μs
13.7
36
11
16
7.7
20
2
14
1060
18
25
20
21
24
27
58
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
mΩ
0.94
1.5
万和兴电子有限公司 www.whxpcb.com
Min
30
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
1
5
10
μA
μA
V
V
A
mΩ
mΩ
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
μs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 2: Feb 2008
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
