AO8814
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=7.5A
T
J
=125°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=7A
V
GS
=3.6V, I
D
=6A
V
GS
=2.5V, I
D
=6A
V
GS
=1.8V, I
D
=5A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=7.5A
I
S
=1A,V
GS
=0V
±12
0.5
30
10
14
11.5
13
15
20
13
18
15
16.8
19
26
30
0.74
1
2.5
1390
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
190
150
1.5
15.4
V
GS
=4.5V, V
DS
=10V, I
D
=7.5A
1.4
4
6.2
V
GS
=5V, V
DS
=10V, R
L
=1.3Ω,
R
GEN
=3Ω
I
F
=7.5A, dI/dt=100A/µs
11
40.5
10
15
5.1
16
22
18
20
24
34
0.71
1
Min
20
1
5
10
Typ
Max
Units
V
µA
µA
V
V
A
mΩ
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.5A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°
C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 5: Feb 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.