AO8810A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
V
GS
=1V
5
3V
2V
V
GS
=1.5V
I
D
(A)
10
125°C
25°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
15
20
V
GS
=5V
40
Normalize ON-Resistance
V
GS
=1.8V
R
DS(ON)
(m
Ω
)
30
V
GS
=2.5V
20
V
GS
=3.8V
V
GS
=4.5V
10
0
5
10
15
20
1.6
I
D
=7A
1.4
V
GS
=4.5V
V
GS
=1.8V
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
V
GS
=2.5V
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
I
D
=7A
1E+01
1E+00
40
R
DS(ON)
(m
Ω
)
1E-01
I
S
(A)
30
1E-02
1E-03
20
25°C
10
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
125°C
Alpha & Omega Semiconductor, Ltd.
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