AO8810
20V Common-Drain Dual N-Channel MOSFET
General Description
The AO8810 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It is ESD protected.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration.
Product Summary
V
DS
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
= 4.5V)
R
DS(ON)
(at V
GS
= 4.0V)
R
DS(ON)
(at V
GS
= 3.1V)
R
DS(ON)
(at V
GS
= 2.5V)
R
DS(ON)
(at V
GS
= 1.8V)
ESD protected
20V
7A
< 20mΩ
< 20.5mΩ
< 21.5mΩ
< 23mΩ
< 28mΩ
TSSOP8
Top View
Bottom View
D1/D2
S1
S1
G1
Pin 1
TSSOP-8
Top View
1
2
3
4
8
7
6
5
D1/D2
S2
S2
G2
G1
1.8KΩ
D1
D2
G2
1.8KΩ
S1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
20
±8
7
5.7
25
1.5
1.0
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°
C/W
°
C/W
°
C/W
Rev 8: Oct. 2012
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