AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected.
Standard Product AO7800 is Pb-
free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 0.9 A (V
GS
= 4.5V)
R
DS(ON)
< 300mΩ (V
GS
= 4.5V)
R
DS(ON)
< 350mΩ (V
GS
= 2.5V)
R
DS(ON)
< 450mΩ (V
GS
= 1.8V)
SC-70-6
(SOT-323)
Top View
S1
G1
D2
D1
G2
S2
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
20
±8
0.9
0.7
5
0.3
0.19
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
360
400
300
Max
415
460
350
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
