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AO7417L 参数 Datasheet PDF下载

AO7417L图片预览
型号: AO7417L
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 135 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO7417L的Datasheet PDF文件第1页浏览型号AO7417L的Datasheet PDF文件第3页浏览型号AO7417L的Datasheet PDF文件第4页  
AO7417  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=-250µA, VGS=0V  
-20  
V
VDS=-20V, VGS=0V  
-1  
-5  
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS=±8V  
±100  
-1  
nA  
V
VGS(th)  
ID(ON)  
VDS=VGS ID=-250µA  
VGS=-4.5V, VDS=-5V  
VGS=-4.5V, ID=-2A  
-0.5  
-20  
-0.65  
A
65  
90  
80  
mΩ  
TJ=125°C  
110  
100  
125  
150  
mΩ  
mΩ  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
V
GS=-2.5V, ID=-1.8A  
80  
VGS=-1.8V, ID=-1.5A  
VGS=-1.5V, ID=-0.5A  
VDS=-5V, ID=-2A  
IS=-1A,VGS=0V  
100  
115  
10  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
S
V
A
-0.7  
-1  
-1  
Maximum Body-Diode Continuous Current  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
560  
80  
745  
pF  
pF  
pF  
VGS=0V, VDS=-10V, f=1MHz  
GS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
70  
V
15  
23  
11  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
8.5  
1.2  
2.1  
7.2  
36  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=-4.5V, VDS=-10V, ID=-2A  
VGS=-4.5V, VDS=-10V, RL=5,  
RGEN=6Ω  
tD(off)  
tf  
53  
56  
trr  
IF=-2A, dI/dt=100A/µs  
IF=-2A, dI/dt=100A/µs  
37  
49  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
27  
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value  
in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulse width, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
Rev0: May 2008  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1:Aug 2005  
Alpha Omega Semiconductor, Ltd.  
www.aosmd.com