万和兴电子有限公司 www.whxpcb.com
AO7417
20V P-Channel MOSFET
General Description
The AO7417 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.5V, in the small SOT363 footprint.
This device is suitable for use in buck convertor.
Product Summary
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
R
DS(ON)
(at V
GS
=-1.8V)
R
DS(ON)
(at V
GS
=-1.5V)
-20V
-2A
< 80mΩ
< 100mΩ
< 125mΩ
< 150mΩ
Top View
SC-70-6
(SOT-323)
Bottom View
Top View
D
D
D
G
1
6
5
4
D
D
S
G
S
2
3
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Steady State
-20
±8
-1.9
-1.6
-20
0.57
0.36
-55 to 150
Units
V
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
0.63
0.4
-2
-1.7
V
A
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
160
180
130
Max
200
220
160
Units
°
C/W
°
C/W
°
C/W
Rev.1. 0: March 2013
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
