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AO7414_13 参数 Datasheet PDF下载

AO7414_13图片预览
型号: AO7414_13
PDF下载: 下载PDF文件 查看货源
内容描述: 20V N沟道MOSFET [20V N-Channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 1719 K
品牌: AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
 浏览型号AO7414_13的Datasheet PDF文件第1页浏览型号AO7414_13的Datasheet PDF文件第3页浏览型号AO7414_13的Datasheet PDF文件第4页  
AO7414  
万和兴电子有限公司 www.whxpcb.com  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
20  
V
VDS=20V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS=±8V  
VDS=VGSID=250µA  
VGS=4.5V, VDS=5V  
VGS=4.5V, ID=2A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
1
nA  
V
VGS(th)  
ID(ON)  
0.5  
25  
0.68  
A
50  
70  
56  
66  
15  
0.7  
62  
90  
70  
85  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=2.5V, ID=1.8A  
VGS=1.8V, ID=1A  
mΩ  
mΩ  
S
VDS=5V, ID=2A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
IS=1A,VGS=0V  
1
V
Maximum Body-Diode Continuous Current  
0.35  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
260  
48  
27  
3
320  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
4.5  
3.8  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayT
Turn-On Ris
Turn-Off
Turn-Off
2.9  
0.4  
0.6  
2.5  
3.2  
21  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
RL=5,  
tD(off)  
tf  
3
trr  
=100A/µs  
I/dt=100A/µs  
Body Diode R
Body Diode Reve
14  
19  
ns  
Qrr  
nC  
3.4  
A: The value of R θJA is measured with thFR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The  
value in any given application depends on tard design. The current rating is based on the t 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junce.  
C. The R θJA is the sum of the thermal impedence tion to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtd using <300 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA  
curve provides a single pulse rating.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev.2.0: April 2013  
www.aosmd.com  
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