AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.00
V
DS
=-10V
I
D
=-1.4A
Capacitance (pF)
600
800
C
iss
400
C
oss
200
C
rss
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
100µs
1ms
0.1s
10ms
14
12
10µs
10
Power (W)
8
6
4
10s
DC
2
0
0.001
10.00
-I
D
(Amps)
T
J(Max)
=150°C
T
A
=25°C
1.00
0.10
1s
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=360°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
