AO7413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-9V
-8V
-7V
15
-I
D
(A)
-6V
-3V
10
-2.5V
5
-2V
V
GS
=-1.5V
0
2
3
4
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
2
125°C
25°C
-3.5V
6
-I
D
(A)
-5V
-4V
8
10
V
DS
=-5V
4
0
0
0
2
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1
4
180
V
GS
=-2.5V
Normalized On-Resistance
1.60
I
D
=-1.1A, V
GS
=-2.5V
1.40
I
D
=-1.3A, V
GS
=-4.5V
160
R
DS(ON)
(mΩ)
Ω
140
V
GS
=-4.5V
120
V
GS
=-10V
1.20
I
D
=-1.4A, V
GS
=-10V
1.00
100
80
0
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1
0.80
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
360
320
280
R
DS(ON)
(mΩ)
Ω
I
D
=-1.4A
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
240
200
160
120
25°C
80
0
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
125°C
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
25°C
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.2
Rev 4: Nov 2011
www.aosmd.com
Page 3 of 5
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
