AO7412
30V N-Channel MOSFET
General Description
The AO7412 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V, in the small SOT323 footprint. It
can be used for a wide variety of applications, including
load switching, low current inverters and low current DC-
DC converters.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
30V
1.7A
< 55mΩ
< 65mΩ
< 85mΩ
SC70-6L
(SOT363)
Top View
Bottom View
D
D
G
Top View
1
2
3
6
5
4
D
D
S
G
D
S
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
30
±12
1.7
1.3
15
0.35
0.22
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
340
280
Max
360
425
320
Units
°
C/W
°
C/W
°
C/W
Rev 2: August 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
