AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
10
8V
4.5V
8
2V
I
D
(A)
3V
2.5V
6
4
4
V
GS
=1.5V
2
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
(Volts)
Fig 1: On-Region Characteristics
140
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
2
4
6
8
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
180
160
I
D
=2.2A
140
R
DS(ON)
(m
Ω
)
I
S
(A)
120
100
80
60
1
2
3
4
5
6
7
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1E-01
1E-02
25°C
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
1E+01
1E+00
125°C
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
DS
=5V
25°C
125°C
12
I
D
(A)
8
0
V
GS
=2.5V
I
D
=2.0A
V
GS
=1.8V
I
D
=1.0A
V
GS
=4.5V
I
D
=2.2A
120
R
DS(ON)
(m
Ω
)
V
GS
=1.8V
100
V
GS
=2.5V
80
V
GS
=4.5V
60
125°C
Alpha Omega Semiconductor, Ltd.