AO7407
20V P-Channel MOSFET
General Description
The AO7407 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with
gate voltages as low as 1.8V. This device is suitable for
use as a load switch or in PWM applications.
Product Summary
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
R
DS(ON)
(at V
GS
=-1.8V)
-20V
-1.2A
< 135mΩ
< 170mΩ
< 220mΩ
SC-70
(SOT-323)
Top View
Bottom View
D
D
D
S
G
S
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
Maximum
-20
Units
V
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
±8
-1.2
-1
-10
0.63
0.4
-55 to 150
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
160
180
130
Max
200
220
160
Units
°C/W
°C/W
°C/W
Rev 4: June 2010
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
