AO6802
N-Channel Electrical Characteristics (T =25°C unless otherwise noted)
J
10
8
V
GS
(Volts)
6
4
2
0
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
400
V
DS
=15V
I
D
=3.1A
Capacitance (pF)
300
C
iss
200
C
oss
100
C
rss
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
10.0
R
DS(ON)
limited
10µs
Power (W)
20
T
J(Max)
=150°C
T
A
=25°C
15
I
D
(Amps)
100µs
1ms
0.1s 10ms
10
1.0
1s
10s
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
5
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
