AO6804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
= 10V
I
D
= 5A
1000
800
Capacitance (pF)
C
iss
600
400
200
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
100
1000
T
J(Max)
=150°C
T
A
=25°C
10
I
D
(Amps)
10µs
100
Power (W)
100µs
1
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
1ms
10ms
100ms
DC
10s
10
0.1
1
I
F
=-6.5A, dI/dt=100A/µs
10
100
V
DS
(Volts)
0.1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=118°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com