AO6804A
20V Dual N-Channel MOSFET
General Description
The AO6804A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is
suitable for use as a load switch applications.
Product Summary
V
DS
= 20V
I
D
= 5.0A
R
DS(ON)
< 28m
R
DS(ON)
< 30m
R
DS(ON)
< 34m
R
DS(ON)
< 39m
(V
GS
= 4.5V)
(V
GS
= 4.5V)
(V
GS
= 4.0V)
(V
GS
= 3.1V)
(V
GS
= 2.5V)
TSOP6
Top View
Bottom View
Top View
D1
11
G1
D1/D2
G2
S1
G1
Rg
G2
Rg
D2
11
S1
D1/D2
S2
Pin1
1
2
3
6
5
4
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Power Dissipation
A
Maximum
20
±12
5
4
25
1.3
0.8
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
C
T
A
=70°
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
76
118
54
Max
95
150
68
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
