AO6804A
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO6804A/L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch applications.
AO6804A and AO6804AL are electrically identical.
-RoHS Compliant
-AO6804AL is Halogen Free
Features
V
DS
= 20V
I
D
= 5.0A
R
DS(ON)
< 28m
R
DS(ON)
< 30m
R
DS(ON)
< 34m
R
DS(ON)
< 39m
(V
GS
= 4.5V)
(V
GS
= 4.5V)
(V
GS
= 4.0V)
(V
GS
= 3.1V)
(V
GS
= 2.5V)
ESD Protected!
TSOP6
TSOP6
Top View
G1
S1
D1/D2
S2
1 6
2 5
3 4
G1
D1/D2
G2
Rg
D1
D2
Rg
G2
S1
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
B
Power Dissipation
A
Maximum
20
±12
5
4
25
1.3
0.8
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
Typ
76
118
54
Max
95
150
68
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
