AO6802
N-Channel Electrical Characteristics (T =25°C unless otherwise noted)
J
15
12
9
I
D
(A)
6
3
V
GS
=3V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
120
Normalized On-Resistance
110
100
R
DS(ON)
(m
Ω
)
90
80
70
60
50
40
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
250
I
D
=3.1A
1.0E+01
1.0E+00
1.0E-01
R
DS(ON)
(m
Ω
)
125°C
100
I
S
(A)
150
1.0E-02
25°C
1.0E-03
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=10V
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
I
D
=2A
V
GS
=10V
I
D
=3.1A
0
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics
10
10V
8V
6V
4.5V
4V
3.5V
6
I
D
(A)
5V
8
V
DS
=5V
4
2
125°C
25°C
200
125°C
50
0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
