AO6800
30V Dual N-Channel MOSFET
General Description
The AO6800 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 10V)
R
DS(ON)
(at V
GS
= 4.5V)
R
DS(ON)
(at V
GS
= 2.5V)
30V
3.4A
< 60mΩ
< 70mΩ
< 90mΩ
TSOP6
Top View
Bottom View
Top View
D1
D2
G1
S2
G2
Pin1
1
2
3
6
5
4
D1
S1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
30
±12
3.4
2.7
20
1.15
0.73
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°
C/W
°
C/W
°
C/W
Rev 5: December 2010
www.aosmd.com
Page 1 of 5