AO6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
100
80
60
40
20
0
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
125°C
f = 1MHz
25°C
0.2 0.4
0.0
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
VF (Volts)
V
KA (Volts)
Figure 12: Schottky Forward Characteristics
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.4
0.3
0.2
0.1
IF=0.5A
VR=16V
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=160°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
