AO6702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
1.0E+01
125°C
1.0E+00
Capacitance (pF)
I
F
(Amps)
80
60
40
20
0
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
100
f = 1MHz
1.0E-01
1.0E-02
25°C
1.0E-03
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
0.5
1.0E-02
0.4
V
F
(Volts)
I
F
=0.5A
0.3
Leakage Current (A)
1.0E-03
1.0E-04
V
R
=16V
0.2
1.0E-05
0.1
0
25
50
75
100
Temperature (°C)
125
150
1.0E-06
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=135°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
