AO6706
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3.5V
4V
6V
9
I
D
(A)
I
D
(A)
3V
6
10
V
DS
=5V
8
6
V
GS
=2.5V
3
4
125°C
2
25°C
0
0
1
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
5
0
0
0.5
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3.5
200
175
Normalized On-Resistance
150
R
DS(ON)
(m
Ω
)
125
100
75
50
25
0
0
2
4
6
8
10
V
GS
=10V
V
GS
=4.5V
1.8
1.6
1.4
V
GS
=4.5V
I
D
=3.0A
270
V
GS
=2.5V
1.7
3.6
I
GS
D
=3.3A
V =10V
1.2
1
0.8
0
25
50
75
100
V
GS
=2.5V
I
D
=1A
13
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
I
D
=3.3A
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
