AO6603
P-CHANNEL:
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
15
-5V
-4.5V
-4V
-I
D
(A)
V
GS
=-3.5V
10
-3V
5
-2.5V
2
-2V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
250
225
200
R
DS(ON)
(m
Ω
)
175
150
125
100
75
50
0
1
2
3
4
5
6
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
350
300
250
R
DS(ON)
(m
Ω
)
200
150
100
50
0
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
D
=-2.5A
-I
S
(A)
V
GS
=-10V
V
GS
=-4.5V
Normalized On-Resistance
V
GS
=-2.5V
1.4
V
GS
=-2.5V
1.2
I
D
=-2.5A
1
1.6
V
GS
=-4.5V, V
GS
=-10V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
6
125°C
4
8
10
V
DS
=-5V
25°C
-I
D
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
125°C
Alpha and Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
