AO6602
N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
400
300
200
100
0
10
8
VDS=15V
ID=3.1A
Ciss
6
4
Coss
Crss
2
0
0
1
2
3
4
5
6
7
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
20
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
15
10
5
10µs
RDS(ON)
limited
100µs
1ms
0.1s
10ms
1s
10s
DC
0.1
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha and Omega Semiconductor, Ltd.