AO6601, AO6601L
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
20
15
10
5
VDS=-5V
-10V
-4.5V
-4V
8
25°C
6
VGS=-3.5V
125°C
4
-2V
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
250
225
200
175
150
125
100
75
1.6
1.4
1.2
1
VGS=-4.5V, VGS=-10V
VGS=-2.5V
VGS=-2.5V
VGS=-4.5V
VGS=-10V
ID=-2A
50
0.8
0
1
2
3
4
5
6
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
350
300
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-2A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
