AO6604
20V Complementary MOSFET
General Description
The AO6604 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch
and battery protection applications.
Product Summary
N-Channel
V
DS
= 20V
I
D
= 3.4A (V
GS
=4.5V)
R
DS(ON)
< 65m
< 75m
< 100m
(V
GS
=4.5V)
(V
GS
=2.5V)
(V
GS
=1.8V)
P-Channel
-20V
-2.5A (V
GS
=-4.5V)
R
DS(ON)
< 75m
< 95m
< 115m
(V
GS
=-4.5V)
(V
GS
=-2.5V)
(V
GS
=-1.8V)
TSOP6
Top View
Bottom View
Top View
D1
D2
G1
S2
G2
Pin1
1
2
3
6
5
4
D1
S1
D2
G1
S1
G2
S2
n-channel
p-channel
Units
V
V
A
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Max p-channel
-20
±8
-2.5
-2
-13
1.1
0.7
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
±8
3.4
2.5
13
1.1
0.7
-55 to 150
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
78
106
64
Max
110
150
80
Units
°
C/W
°
C/W
°
C/W
Rev 4: Sep 2010
www.aosmd.com
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