AO6422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
1
2
3
4
5
6
7
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
= 10V
I
D
= 5A
Capacitance (pF)
600
C
iss
400
800
200
C
rss
0
C
oss
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
R
DS(ON)
limited
10µs
1000
T
J(Max)
=150°C
T
A
=25°C
10
1
1ms
10ms
100ms
10s
DC
Power (W)
I
D
(Amps)
100µs
100
10
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
0.01
I
F
=-6.5A, dI/dt=100A/µs
10
100
1
0.00001
0.001
0.1
10
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com