AO6422
20V N-Channel MOSFET
General Description
The AO6422 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for general purpose application.
Product Summary
V
DS
= 20V
I
D
= 5A
R
DS(ON)
< 44m
R
DS(ON)
< 55m
R
DS(ON)
< 72m
(V
GS
= 4.5V)
(V
GS
= 4.5V)
(V
GS
= 2.5V)
(V
GS
= 1.8V)
TSOP6
Top View
Bottom View
Top View
D
D
D
G
Pin1
1
2
3
6
5
4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
10 Sec
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Steady State
20
±8
3.9
3
30
1.1
0.7
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
2.0
1.3
5
4.2
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
-55 to 150
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
47.5
74
54
Max
62.5
110
68
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com