AO6420
60V N-Channel MOSFET
General Description
The AO6420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
(V) = 60V
I
D
= 4.2A (V
GS
= 10V)
R
DS(ON)
< 60mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
TSOP6
Top View
Bottom View
Top View
D
D
D
G
Pin1
1
2
3
6
5
4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A,F
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum
60
±20
4.2
3.4
20
2.00
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
