AO6419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-10V
-6V
15
-I
D
(A)
-5V
-4V
-I
D
(A)
-4.5V
8
6
4
2
0
1.00
2.00
3.00
4.00
5.00
0
1
2
3
4
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-V
GS
(Volts)
Figure 2: Transfer Characteristics
V
DS
=-5V
10
-3.5V
V
GS
=-3V
-2.5V
125°C
25°C
5
0
0.00
100
V
GS
=-3.5V
80
R
DS(ON)
(m
Ω
)
V
GS
=-4.5V
60
V
GS
=-10V
40
Normalized On-Resistance
1.6
V
GS
=-4.5V
1.4
V
GS
=-10V
1.2
V
GS
=-3.5V
1
I
D
=-5A
20
1
3
5
7
9
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
140
120
R
DS(ON)
(m
Ω
)
100
80
60
40
25°C
125°C
-I
S
(A)
I
D
=-5A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.