AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-10V
I
D
=-2A
800
Capacitance (pF)
600
C
iss
400
200
C
rss
0
0
5
C
oss
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.00
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
20
10µs
15
10.00
-I
D
(Amps)
T
J(Max)
=150°C
T
A
=25°C
100µs
Power (W)
1.00
1s
0.10
10s
DC
10ms
0.1s
10
5
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=140°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
