AO6414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
50
0
0
2
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
3
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
V
DS
=25V
I
D
=2.4A
400
350
Capacitance (pF)
300
250
200
150
100
C
oss
C
rss
C
iss
100.00
20
10.00
I
D
(Amps)
R
DS(ON)
limited
1.00
10ms
1s
DC
0.10
T
J(Max)
=150°C
T
A
=25°C
0.1s
10s
10μs
Power (W)
100μs
1ms
15
10
5
0
0.001
1
100
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
