AO6402A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402A/L uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
AO6402A and AO6402AL are electrically identical.
-RoHS Compliant
-AO6402AL is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 7A
R
DS(ON)
< 27mΩ
R
DS(ON)
< 40mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
TSOP-6
D
Top View
D
D
G
1 6
2 5
3 4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A,F
Pulsed Drain Current
Power Dissipation
B
Maximum
30
±20
7.0
5.6
30
2.0
1.28
-55 to 150
Units
V
V
A
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
35
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com