AO6409
20V P-Channel MOSFET
General Description
The AO6409 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
Product Summary
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
= -4.5V)
R
DS(ON)
(at V
GS
= -2.5V)
R
DS(ON)
(at V
GS
= -1.8V)
-20V
-5.5A
< 41mΩ
< 53mΩ
< 65mΩ
ESD Protected
TSOP6
Top View
Bottom View
Top View
D
D
G
D
D
S
G
D
1
2
3
6
5
4
S
Pin1
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-20
±8
-5.5
-4.2
-30
2.1
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
75
37
Max
60
90
45
Units
°
C/W
°
C/W
°
C/W
Rev 5: Sep 2011
www.aosmd.com
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