AO6405
30V P-Channel MOSFET
General Description
The AO6405 uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
-30V
-5A
< 52mΩ
< 87mΩ
TSOP6
Top View
Bottom View
Top View
D
D
D
G
Pin
1
1
2
3
6
5
4
D
D
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-30
±20
-5
-4.2
-20
2
1.3
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
°
C/W
°
C/W
°
C/W
Rev 5: Nov 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
