AO6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-6A
8
Capacitance (pF)
1200
1000
C
iss
800
600
400
200
0
0
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
4
14
0
C
rss
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
-V
GS
(Volts)
6
4
C
oss
2
0
100.0
10000
T
A
=25°C
1000
Power (W)
10.0
-I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
1.0
1ms
10ms
DC
100
0.1
T
J(Max)
=150°C
T
A
=25°C
10s
10
0.0
0.01
1
10
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
T
Rev 4: Nov 2011
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
